50V, DC – 7GHz, 20W GaN HEMT, Bare Die
The GRF0020D is a 30W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 7GHz on a 50V supply rail. The wide bandwidth of the GRF0020D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.
Bare die are shipped in 2-inch waffle trays for safe transport and storage.
Product Categories
Markets
Applications
- 5G Base Stations and Network Infrastructure
- Satellite Communication Systems
- Microwave and Millimeter-Wave Communications
- Advanced Driver-Assistance Systems (ADAS)
- Collision Detection Radar
- Medical Imaging Devices (e.g., MRI)
- RF Heating and Plasma Generation
- Semiconductor Testing Equipment
- Broadcast Transmitters
- High-Power Microwave Systems
- Distributed Antenna Systems (DAS)
- Repeaters
- High-Power Laser Amplification
Features
- Operating Frequency Range: DC to 7.0GHz
- Maximum Output Power (PSAT): 30W
- Operating Drain Voltage: 28V & 50V
- Suitable for CW, Pulsed, Linear applications
- 100% KGD DC Production Tested
Reference: 50V/30mA/3000MHz
- Power Gain: 18.7 dB
- Saturated Drain Efficiency: 63.8%
- Saturated Output Power: 45.4 dBm