Unmatched Discrete GaN-on-SiC HEMT in 3x3 QFN16 package, 50W PSAT at 50V or 25W PSAT at 28V
DC - 6 GHz
The GRF0030 is a 50W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 6.0GHz on a 50V supply rail. This device can also function on a 28V supply rail, delivering 25W of saturated power output. The wide bandwidth of the GRF0030 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulse operations. The device is housed in an industry-standard 3x3 mm surface mount QFN-16 package. Lead-free and ROHS compliant.
Product Categories
Markets
Applications
- 5G Base Stations and Network Infrastructure
- Satellite Communication Systems
- Microwave and Millimeter-Wave Communications
- Advanced Driver-Assistance Systems (ADAS)
- Collision Detection Radar
- Medical Imaging Devices (e.g., MRI)
- RF Heating and Plasma Generation
- Semiconductor Testing Equipment
- Broadcast Transmitters
- High-Power Microwave Systems
- Distributed Antenna Systems (DAS)
- Repeaters
- High-Power Laser Amplification
Features
- Operating Frequency Range: DC to 6.0GHz
- Maximum Output Power (PSAT): 50W
- Operating Drain Voltage: 28V & 50V
Reference: 50V/50mA/3000MHz
- Power Gain: 16 dB
- Small Signal Gain: 15.5 dB
- Saturated Drain Efficiency: 54.5%
- Saturated Output Power: 47 dBm
- Industry-standard 3x3 mm surface mount QFN-16 package
- Lead-free and ROHS compliant
- Suitable for Pulsed, Linear applications
- 100% DC & RF Production Tested