GaN HEMT Power Transistor, 150 Watt P3dB
DC - 3.2 GHz
The GRF0135 is a 150W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.2GHz on a 50V supply rail. The wide bandwidth of the GRF0135 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulse operations. The device is housed in an industry-standard 6x3 mm surface mount DFN-14 package. Lead-free and RoHS compliant.
Product Categories
Markets
Applications
- Cellular Infrastructure
- Radar
- Communications
- Test Instrumentation
Features
- Operating Frequency Range: DC to 3.2GHz
- Maximum Output Power (PSAT): 150W
- Operating Drain Voltage: 28V & 50V
- Suitable for Pulsed, Linear applications
- 100% DC & RF Production Tested
- Compact 6 x 3 mm DFN-14 Package
Reference: 50V/150mA/3.2GHz
- Saturated Gain: 13.8 dB
- Saturated Drain Efficiency: 57%
- Saturated Output Power: 51.8 dBm