Dual 30 Watt GaN Power Transistor
Near DC - 6 GHz
The GRF5923 is a broadband GaN-on-SiC high electron mobility transistor (HEMT) which provides up to 30W of saturated power per side for a variety of commercial and military applications. By using specific matching topologies, the device can be tuned to operate within a multitude of bands from near DC to 6 GHz.
The GRF5923 is part of a new family of single and dual-path GaN power transistors which deliver between 6W and 30W of saturated output power. As a dual 30W device, the GRF5923 is well suited as a driver for base station transmitters, or as a final stage PA for various military communications systems.
Please consult with the GRF applications engineering team for custom tuning/evaluation board data.
Product Categories
Markets
Applications
- 4G / 5G Drivers
- Radar
- Military Communications
- Instrumentation
Features
- Wide Operating Frequency Range: DC to 6 GHz
- Operating Drain Voltage: 50 V
- Maximum Saturated Output Power (PSAT at P2.5dB): 44.7 dBm (single PA), 47 dBm (combined PAs)
- Uses Proven 4 x 4 mm QFN-24 SMT Packaging
- Process: GaN on SiC
Reference: 50V/50mA/3 to 4 GHz
- Dual 30W saturated output power (PSAT)
- 50% Pulsed Drain Efficiency at PSAT
- Pulsed Large Signal Gain: 13.5 dB